| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S156-915 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68721
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2000-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2007-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100743872-B1 |
| titleOfInvention |
Technique to improve the uniformity of etch rate |
| abstract |
Improved methods and apparatus for ion assisted etching treatments in plasma processing systems are known. According to various aspects of the present invention, high edge rings, grooved edge rings, RF coupled edge rings are known. The present invention improves the etch rate uniformity for the substrate (wafer). The improved etch rate uniformity line according to the present invention improves not only manufacturing yield but also cost effectiveness, and there is no risk of particulate and / or heavy metal contamination. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102208209-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140103872-A |
| priorityDate |
1999-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |