http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100739909-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate | 2000-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100739909-B1 |
| titleOfInvention | Etching Method and Plasma Treatment Method |
| abstract | Into the processing chamber 102 of the plasma processing apparatus 100, a processing gas made of CH 2 F 2, O 2, and Ar is introduced. The flow rate ratio of the treatment gas is set to CH 2 F 2 / O 2 / Ar = 20sccm / 10sccm / 100sccm. In addition, the pressure in the process chamber 102 is set to 50 mTorr. High frequency power of 500 W is applied to the lower electrode 108 on which the wafer W is mounted at 13.56 MHz. The processing gas is plasmalized and the SiNx layer 206 formed on the Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and no C or F is injected. |
| priorityDate | 1999-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.