http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100719188-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2000-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100719188-B1 |
| titleOfInvention | Substrate Processing Method |
| abstract | When performing the aging treatment, since the ratio of water vapor contained in the processing gas is relatively large at a certain time from the start of the treatment, the colloid of TEOS contained in the insulating film material applied on the wafer is gelled. Connection in a mesh shape is promoted, and heating to the wafer W is performed uniformly. Moreover, since the ratio of the water vapor of the processing gas is subsequently reduced, the amount of water contained in the insulating film material after the aging treatment can be reduced. |
| priorityDate | 1999-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.