| abstract |
At least silicon atoms, oxygen atoms, and carbon atoms, wherein the number ratio of silicon atoms to oxygen atoms is at least 1 to 1.5, the number ratio of silicon atoms to carbon atoms is 1 to 1 to 2, and the film thickness upon oxidation Interlayer insulating films having shrinkage of 14% or less in the direction have a very low dielectric constant, high selectivity for resist etching, and can be used without using a silicon oxide protective film in a semiconductor device.n n n n Silicon, oxygen, carbon, resist etching, silicon oxide protective film |