| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
1999-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2006-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100613842-B1 |
| titleOfInvention |
Etching method for making silicon substantially free of undercut on insulator structure |
| abstract |
Anisotropic plasmas on silicon on insulator substrates where the undercut is substantially removed by using a reactive ion etching process with reduced ion density as a final etching step to limit ion charge through different sized recesses to uniformly etch in the vertical direction. How to etch. |
| priorityDate |
1998-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |