http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100583418-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2004-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100583418-B1 |
| titleOfInvention | Plasma etching chamber |
| abstract | According to the present invention, in the dry cleaning of the film quality deposited on the edge of the wafer and the particles by plasma etching, plasma is generated in an area from the top surface to the bottom surface of the wafer so that the edge cleaning of the wafer is performed perfectly. To provide a plasma etching chamber, which has a pair of anodes facing up and down with respect to the edge of the wafer to which high frequency is applied via the cathode, or that the cathode and anode face up and down from the edge of the wafer, It consists of a structure which shields the periphery of the mutually opposing space | interval by viewing, arrange | positions the plasma etching chamber of such a structure in multiple rows, and a general handler takes out a wafer from a cassette row of several rows, or a load port, and once Posture Correction of OF Position Via Wafer Alignment And then through the load lock chamber or directly loaded into the plasma etching chamber to be etched, and the etched wafer is again taken out by the handler through the load lock chamber, or directly into the cassette, A plasma etching system that returns to a load port can be realized.n n n n Dry Etching Equipment, Wafer Edge Etching, Plasma Etching |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101611941-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102396431-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102431045-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220021551-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220021897-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008005521-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302558-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101412620-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101357698-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023017908-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008005517-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101526020-B1 |
| priorityDate | 2003-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970 |
Total number of triples: 31.