http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100573897-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24917 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00 |
| filingDate | 2003-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100573897-B1 |
| titleOfInvention | Semiconductor manufacturing method |
| abstract | The present invention relates to the formation of copper wirings by depositing Hf to remove oxides on the copper surface during copper wiring formation to remove copper oxide and to form copper wiring.n n n The semiconductor manufacturing method of the present invention comprises the steps of forming a multilayer or single layer copper wiring and a protective insulating film on a substrate on which a predetermined element is formed; Forming via holes on the substrate; Depositing Hf on the via hole; The Hf trapping oxygen; And forming a conductor on the substrate.n n n Therefore, the semiconductor manufacturing method of the present invention does not perform a pre-clean etching process to remove CuO x before forming the via plug, and deposits Hf to reduce oxygen of copper oxide, thereby performing dry pre-clean etching on the entire via. It is possible to prevent the CD from widening and to prevent the expansion of CuO x on the copper surface. It is possible to maintain via CD as its original design, and to prevent the via bottom area from expanding due to solution concentration during wet etching, and to prevent Hf from diffusing oxygen or moisture into the copper wiring through the pad. .n n n n Copper Wiring, Hf |
| priorityDate | 2003-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.