http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100572909-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
filingDate | 2002-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2006-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100572909-B1 |
titleOfInvention | Plasma processing equipment |
abstract | The upper electrode 15a and the lower electrode 15b are provided in the chamber 2 in parallel. Between these electrodes, the upper electrode 15a is electrically grounded. The lower electrode 15b is connected to the first radio frequency generator 13 via the low-pass filter 14 and to the second radio frequency generator 22 via the high-pass filter 23. The wafer W is held against the top of the lower electrode 15b by the high temperature electrostatic chuck ESC. By distributing the first and second radio frequency powers from the radio frequency generators 13 and 22, respectively, the plasma is generated near the lower electrode 15b, and the wafer W is processed by the plasma. By this procedure, a plasma processing apparatus having a high plasma processing efficiency and a simple structure can be provided. |
priorityDate | 2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.