http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100563610-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate | 1997-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100563610-B1 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The present invention enables the CF film process to realize the practical use of the interlayer insulating film using a fluorinated carbon film (hereinafter referred to as "CF film").n n n To this end, in the present invention, a conductive film such as a TiN film 41 is formed on the CF film 4, and a pattern of the resist film 42 is formed thereon, and then the TiN film 41 is formed by, for example, BCl 3 gas. ) Is etched. Subsequently, when the O 2 plasma is irradiated onto the wafer surface, the CF film 4 is called chemistry and the resist film 42 is also etched. Since the TiN film 41 serves as a mask, a predetermined hole Can be formed. Wiring is formed on the surface of the CF film 4 by aluminum or the like. The TiN film 41 serves as an adhesion layer between the wiring and the CF film 4 and becomes part of the wiring. As the mask, an insulating film such as SiO 2 may be used instead of the conductive film. |
| priorityDate | 1996-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.