http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100559621-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-369 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47C17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-389 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-6803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-7445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-6891 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-7455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-6826 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 2003-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2006-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100559621-B1 |
titleOfInvention | Etching method of dry etching equipment with unipolar electrostatic chuck |
abstract | The present invention relates to an etching method of a dry etching equipment having a unipolar electrostatic chuck, including a stable step, a breakthrough etch step, a main etch step and an over etch step, and cooling to a gap space between the electrostatic chuck and the semiconductor substrate. Injecting gas to suppress the temperature increase of the semiconductor substrate by the etching process, the pressure of the cooling gas is characterized in that the pressure difference between the stable step and the next step is set to 5 Torr or less, compared with the prior art By reducing the difference in the cooling gas pressure between the initial step and the next step of etching, there is an advantage of reducing the occurrence frequency of the error due to the cooling gas outflow and reducing the particle generation due to the cooling gas outflow error.n n n n Unipolar, Electrostatic Chuck, Dry Etch, Helium Spill, Particles, Stable Step |
priorityDate | 2003-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23987 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577374 |
Total number of triples: 20.