http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100554210-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 1998-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100554210-B1
titleOfInvention Dual damascene with self aligned via interconnects
abstract An improved method of performing dual damascene etching on a stacked structure disposed on a substrate using self-aligned vias is disclosed. The laminate structure includes a lower conductive layer and an upper insulating layer overlying it. The method includes the following process steps. A patterned hard resist layer is deposited over the top surface of the insulating layer so that the first opening of the hard resist layer overlies the bottom device layer. Next, a soft resist layer is deposited over the top surface of the hard resist, the soft resist having a second opening smaller than the first opening aligned in line with the first opening and the bottom conductive layer. A trench is then formed in the upper surface of the insulating layer, which is located above the lower device layer and is separated from the lower device layer by an insulating material at the bottom of the trench. Next, the soft resist is removed without substantially affecting the hard resist. Vias are formed by etching the insulating material at the bottom of the trench to the underlying device layer.
priorityDate 1997-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458357694
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099669
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458427267
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23968
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6336888
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID281

Total number of triples: 22.