http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100546324-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2003-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100546324-B1 |
| titleOfInvention | Metal oxide thin film formation method by ALD, lanthanum oxide film formation method and high-k dielectric film formation method of semiconductor device |
| abstract | A method of forming a high dielectric film made of a metal oxide is disclosed by a two-step ALD deposition process in which an oxygen depleted metal oxide film and a metal oxide film are sequentially formed. In the present invention, an oxygen-deficient metal oxide film formed of a metal oxide having an oxygen content less than that of a stoichiometrically stable metal oxide is formed on an semiconductor substrate by an ALD process using a first reactant made of an organometallic compound. . A metal oxide film is formed on the oxygen depleted metal oxide film by an ALD process using the second reactant comprising the first reactant and the oxidant. In order to form a lanthanum oxide film by the method according to the present invention, after forming a first lanthanum oxide film having a La 2 O x (x <3) composition by an ALD process, a second lanthanum oxide film having a La 2 O 3 composition is formed thereon. Form. It is advantageous to use an alkoxide-based organometallic compound as the lanthanum source.n n n n Lanthanum oxide film, organometallic compound, alkoxide, oxygen depletion metal oxide film |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220012765-A |
| priorityDate | 2003-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.