http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100538603-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0823 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1999-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100538603-B1 |
| titleOfInvention | Manufacture of trench-gate semiconductor devices |
| abstract | A manufacturing process of a semiconductor device such as, for example, an IGBT or a trench-gate type MOSFET, which includes the following steps: A first mask 51 having a first window 51a is provided with a surface 10a of the semiconductor body 10. ) And forming a second mask 52 having a smaller window 52a by providing sidewall diffusions 52b in the first mask 51. The second region 13 is formed by the dopant 63 which is injected through the first window 51a, where the trench 20 extends through the body region 15 to the bottom 15 of the drain region 14. Etched in the smaller window 52a as much as possible. Gate 11 is provided in trench 20 adjacent to where channel 12 of the device is received. After removing the second mask 52, a source electrode 23 is provided to contact the second region 13 and the adjacent region 15 of the body 10 at the surface 10a. This method, upon doping of the source region 13 and the adjacent region 15, masks self-alignment while providing good reproducibility in the contact region of both the source region 13 and the adjacent region 15 and the source electrode 23. Enable the use of technology. |
| priorityDate | 1998-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.