| abstract |
The present invention relates to a method of forming a photoresist pattern using a silylation process, and more particularly, to a homopolymer or a copolymer including an addition polymerization repeating unit of Formula 1 or Formula 2 below. The present invention relates to a method of using a photoresist composition containing a crosslinking agent in forming a photoresist pattern by a TSI (Top Surface Imaging) process. When the photoresist composition using the crosslinking agent of the present invention is used in the TSI process of the present invention in which the conditions such as temperature and time of each process are optimized, it is more effective than the conventional fine pattern forming method in the 4G DRAM or 16G DRAM semiconductor manufacturing process. A very fine pattern can be obtained.n n n <Formula 1>n n n n n n n n <Formula 2>n n n n n n n n Wherein R 1 , R 2 , R 3 , R 5 , R 6 , R 7 and n are as defined in the specification. |