http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100520163-B1

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
filingDate 2001-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2005-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100520163-B1
titleOfInvention Novel photoresist polymer having nitro group and photoresist composition containing it
abstract The present invention relates to a novel photoresist polymer comprising a nitro group (-NO 2 ) and a photoresist composition containing the same, wherein the photoresist comprises a polymerization repeating unit represented by the following Chemical Formula 1a or 1b. By using the photoresist composition containing the copolymer, a photoresist pattern excellent in durability, etching resistance, reproducibility, and resolution can be formed.n n n In addition, since the photoresist polymer of the present invention contains nitro groups, the absorbance in the 157 nm region is low, so that the photoresist polymer may be particularly useful for the photolithography process using a VUV light source, as well as ArF, KrF, E-beam, EUV or It is also suitable for use in light sources such as ion beams.n n n [Formula 1a]n n n n n n n n [Formula 1b]n n n n n n n n In Formulas 1a and 1b, R 1 , a, b, c, d, e, f, g, and h are as defined in the specification.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101316192-B1
priorityDate 2001-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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