http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100513363-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100513363-B1 |
| titleOfInvention | Method for manufacturing charge storage electrode of semiconductor device |
| abstract | The present invention relates to a method for manufacturing a charge storage electrode of a semiconductor device, in the case of using a Pt film as a storage electrode in the manufacturing process of a ferroelectric RAM (FeRAM) device by plasma etching the Pt film using a hard mask, and then removing the hard mask By removing the polymer generated during the Pt film etching process at the same time by plasma etching process, it is easy to follow-up process to improve the characteristics and reliability of the device, increase the capacitance of the capacitor and thereby high integration of the semiconductor device It is about. |
| priorityDate | 1998-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.