http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100493855-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04 |
| filingDate | 2002-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100493855-B1 |
| titleOfInvention | Siloxane-Based Resin and Method for Forming a Low Dielectric Patterned Film by Using the Same |
| abstract | The present invention relates to one silane compound having an acid and heat labile functional group, a siloxane resin prepared by hydrolysis and polycondensation of one or two other silane compounds, and the resin together with a photoacid generator and an organic solvent. The present invention relates to a method of forming a low dielectric pattern film including a process of heat-treating a pattern obtained by dissolving and coating on a substrate, followed by exposure and development. Since the siloxane-based resin of the present invention serves as a low dielectric and a photoresist, By using this, there is no need to separately perform the interlayer insulation film forming process and the pattern forming process in manufacturing a semiconductor device, thereby simplifying the process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841218-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101157234-B1 |
| priorityDate | 2002-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 108.