http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100480797-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100480797-B1 |
| titleOfInvention | Etching solution to improve etch rate for copper molybdenum multilayers and etching method using the same |
| abstract | The present invention relates to an etching solution used for the wet etching of a metal film in a semiconductor device and an etching method thereof.n n n The present invention comprises 5 to 15% by weight of hydrogen peroxide, 1 to 5% by weight of organic acid, 0.5 to 5% by weight of sulfate, 0.2 to 5% by weight of cyclic amine compound, and 100% by weight of the total composition. An etching solution of a copper molybdenum film containing deionized water to be% and an etching method thereof are provided.n n n According to the etching solution and the etching method according to the present invention, it is possible to realize a low-resistance metal wiring, easy to control the etching speed, good taper profile, excellent pattern linearity, copper film And molybdenum film have similar etching rate, so it is possible to manufacture semiconductor device with large margin in process because it shows good etching property even if the molybdenum film is thick. Also, it is environmental friendly and realizes large screen and high brightness circuit using low resistance copper wiring. Phosphorus semiconductor device can be manufactured. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7888148-B2 |
| priorityDate | 2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 90.