http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100465118-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9ed6971665381bd149fbd11e6e9d2df3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45538 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate | 2004-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c72c032cec239573013cbccdcd64411 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bbe05d4afbe3d281d3d976934e6ddfd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21955917cf92bb7639e55e0c8e2f3cee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0e802078ca99107811dd2b4a22d8b43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_863a755d87327f907324b65bf3edb813 |
| publicationDate | 2005-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100465118-B1 |
| titleOfInvention | Cyclically pulsed plasma atomic layer deposition method |
| abstract | The present invention relates to a method of depositing a thin film using chemical reactions of reactants on a silicon substrate mounted inside a reaction chamber for a semiconductor process, wherein the reactant is chemically highly reactive by applying plasma through a reactor activation device. Neutral radicals and ions are generated and activated, or the reactor is thermally activated or supplied to the reaction chamber after both processes, and further, the plasma energy application cycle applied in the reaction chamber is supplied to the reactant gas. By reducing the number of times of plasma application by skipping in the next cycle without synchronizing cycle by cycle, it reduces the intensity of plasma energy to deposit high quality thin film at low temperature and at the same time reduce the damage by plasma, and furthermore, the reactor inside the reaction chamber Turbulence of pressure A delaying time applied to the plasma until a steady state directed to a periodic pulse plasma atomic layer deposition method capable of continuously reduced with the reliability and reproducibility of the plasma generated in the plasma ignition. |
| priorityDate | 2004-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.