abstract |
The present invention relates to a method for manufacturing a semiconductor device using an etching polymer. Specifically, in the process of manufacturing a semiconductor device, a step of generating a polymer before the trench etching is added, and the polymer generated at this time is subjected to PR corrosion ( The present invention relates to a method of fabricating a semiconductor device that can be used in all processes where the PR margin is insufficient during the trench etching process by improving the etching resistance of PR by acting as a protective layer against erosion. |