http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100446300-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M2021-0027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-3603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-0452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61N1-328 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61M21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2004-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100446300-B1 |
| titleOfInvention | Method for forming metal interconnections of semiconductor device |
| abstract | Disclosed is a method for forming a metal wiring of a semiconductor device for suppressing abnormal growth of a metal on the surface of a barrier metal film exposed due to non-uniform deposition of a metal deposition prevention film in forming a metal wiring according to a PMD process. In the metal wiring forming method according to the present invention, an interlayer insulating film pattern defining a hole region is formed on a semiconductor substrate. A barrier metal film is formed on the bottom of the hole region and on the sidewalls and top of the interlayer insulating film pattern. The exposed surface of the barrier metal film is oxidized. An insulating metal deposition prevention film for selectively exposing the barrier metal film inside the hole region is selectively formed on the barrier metal film. A first metal film is selectively formed to fill a region defined by the barrier metal film exposed in the hole region. A second metal film is formed on the metal deposition preventing film and the first metal film. The second metal film is heat treated to reflow. |
| priorityDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.