| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24917
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24926
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2103-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2103-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-382 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-68 |
| filingDate |
1997-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2004-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100445275-B1 |
| titleOfInvention |
Tool tip and bonding tool comprising the tool tip and control method for the bonding tool |
| abstract |
The present invention has a resistivity of at least 1 × 10 −4 Ωcm or more and less than 1 × 10 3 Ωcm on a surface used for crimping on a base, a surface opposite to this surface, or two or more surfaces intersecting these surfaces. A conductive polycrystalline diamond film having a film thickness in the range of 0.1 m to 500 m is formed by vapor phase synthesis. |
| priorityDate |
1996-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |