http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100439558-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate | 1996-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100439558-B1 |
| titleOfInvention | Method for introducing impurities and method for manufacturing the semiconductor device |
| abstract | An object of the present invention is to efficiently generate an impurity from an impurity solid by introducing an inert or reactive gas into a vacuum chamber so that a high concentration impurity layer can be formed on the surface portion of the solid sample.n n n An impurity solid body 21 containing boron as an impurity and a solid sample 12 to which boron is introduced are held in the vacuum chamber 10. An Ar gas is introduced into the interior of the vacuum chamber 10 to generate a plasma of the Ar gas. A voltage is applied to the impurity solid body 21 so that the impurity solid body 21 becomes a cathode with respect to the plasma so that the impurity solid body 21 is sputtered by the ions in the plasma so that boron contained in the impurity solid body 21 is converted into Ar gas Into the plasma. A voltage at which the solid sample 12 becomes a cathode with respect to the plasma is applied to the solid sample 12 to introduce boron incorporated into the plasma into the surface portion of the solid sample 12. |
| priorityDate | 1995-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.