http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100408768-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J17-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J11-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 |
| filingDate | 2001-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100408768-B1 |
| titleOfInvention | ion beam e-beam have a ion beam assisted e-beam evaporator made platictype display panel a manufacturing process |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin based flat panel display device and a manufacturing method thereof, and more particularly, to forming a thin film pattern in a physical vapor deposition (PVD) process, a liquid crystal display device (LCD), a plasma ITO (Imdium Tin Oxide) transparent electrode deposition film used as a key element when manufacturing flat panel displays (PDP: Plasma Display Panel) and EL, assists the ion beam on the resin substrate PMMA (Polymethyl Methacrylate), PC (Poly Carbonate), PET (Poly Ethylene Terephehalate) and other resins to form a transparent conductive film having a surface resistance of 10Ω / cm-1KΩ / cm and light transmittance of 80% or more at low temperature without deformation. The present invention relates to a resin flat panel display device completed with an ion beam assisted e-beam evaporator, and a method for manufacturing the same. xide) In the process of depositing a transparent conductive film with an ion beam assisted electron beam evaporation apparatus, the deposition pattern can be formed in a desired pattern without a separate process, and thus, conventional dry etching and wet etching, etc. Compared to patterning electrodes, the electrodes can be patterned even if six to seven steps are omitted. Therefore, the production efficiency and productivity of ITO (Imdium Tin Oxide) transparent electrode substrate can be improved to maximize efficiency and assist the ion beam to support PMMA. Manufacturing process by forming transparent conductive film having surface resistance of 10Ω / cm-1KΩ / cm and light transmittance of 80% or more at low temperature without deformation of resin such as (Polymethyl Methacrylate), PC (Polycarbonate), PET (Poly Ethylene Terephehalate) In addition to the simple and sputtering method that is mainstream in the manufacture of transparent conductive films, it is possible to manufacture transparent conductive films with excellent properties at an affordable price. It has the advantage that you can expect a sieve effect. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380753-B2 |
| priorityDate | 2001-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.