| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
1992-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_434f1d89473de240236caf42c67b8e5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a8b9a5c3c040d682c8ec5d6a6adcab7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_249134be689cbc0d3642d044031f18d4 |
| publicationDate |
1994-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H06151612-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
(57) [Abstract] [PROBLEMS] To provide a method of manufacturing a semiconductor device having a multilayer wiring structure and capable of manufacturing a highly reliable semiconductor device. [Structure] An organic silicon polymer planarizing resin layer is formed on a lower wiring layer, and an inorganic material film is formed on the resin layer by vacuum deposition by ion beam assist or ion plating by high-frequency excitation. An insulating film is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4540961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100408768-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100394820-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005036630-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007012639-A |
| priorityDate |
1992-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |