http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100387274-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 1999-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100387274-B1 |
| titleOfInvention | Method of increasing alignment tolerances for interconnect structures |
| abstract | A semiconductor processing method is described that increases the alignment tolerance while forming the conduction projection 72. In one embodiment, the conductive projection is formed over the substrate surface area and includes side and top surfaces to form a corner area. The corner area of the conduction projection is cut into an oblique plane to increase the alignment tolerance. In another embodiment, a conductive plug is formed over the substrate node location between the pair of conductive lines and has a top surface. The conductive plug material is inconsistently removed to form the second top surface, and at least a portion thereof is placed higher than the conductive line. In one aspect, the conductive plug material can be removed by surface etching the conductive plug material. Another feature is that the conductive plug material is not uniformly doped with a dopant, and the conductive plug material having a high concentration of dopant is injected at a faster rate than the plug material having a lower concentration of dopant. |
| priorityDate | 1998-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.