| abstract |
In a flip-chip semiconductor device, a pad electrode and a passivation film are formed on a semiconductor substrate. An insulating resin layer is formed on the passivation film, and an opening is formed over the electrode. A pad electrode adhesive metal film such as a redistribution baton is formed on the substrate, and a plating feed layer metal film and a Cu plating layer are sequentially formed on the metal film to form a wiring layer. A metal post electrode is formed on the wiring layer. Solder bumps are formed on the post electrodes, a support plate having holes larger than the diameter of the solder bumps is formed at a position that matches the position where the solder bumps are arranged, and an insulating resin layer is formed between the support plate and the semiconductor substrate. Thus, the stress acting on the solder bumps is alleviated. |