abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device which coats copper wiring to form an interlayer insulating film having a low dielectric constant. The structure is a method of manufacturing a semiconductor device in which an insulating film 25 having a low dielectric constant is formed on a substrate 21. The insulating film 25 is formed of an alkyl compound having a siloxane bond and methylsilane (SiH n (CH 3 ) 4 ). -n : plasma is formed into a film forming gas containing at least one of n = 0, 1, 2 , 3 , an oxygen-containing gas of N 2 O, H 2 O or CO 2 and ammonia (NH 3 ); And react to form a film. |