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filingDate 2001-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2003-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100376170-B1
titleOfInvention Semiconductor device and method of manufacturing the same
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device which coats copper wiring to form an interlayer insulating film having a low dielectric constant. The structure is a method of manufacturing a semiconductor device in which an insulating film 25 having a low dielectric constant is formed on a substrate 21. The insulating film 25 is formed of an alkyl compound having a siloxane bond and methylsilane (SiH n (CH 3 ) 4 ). -n : plasma is formed into a film forming gas containing at least one of n = 0, 1, 2 , 3 , an oxygen-containing gas of N 2 O, H 2 O or CO 2 and ammonia (NH 3 ); And react to form a film.
priorityDate 2000-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 54.