| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-914
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D1-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
1999-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2003-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100364053-B1 |
| titleOfInvention |
Silicon polymer insulation film on semiconductor substrate and method for forming the film |
| abstract |
A method of forming a silicon polymer insulating film having a low relative dielectric constant, high thermal stability, and high moisture resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is to directly evaporate the silicon-containing hydrocarbon compound represented by the general formula Si α O β C x H y (α, β, x and y are integers) and then introduce the evaporated compound into the reaction chamber of the plasma CVD apparatus. . Silicon containing hydrocarbon compounds have at most two OC n H 2n + 1 bonds and at least two silicon-hydrocarbon radical bonds. The next step is to introduce additional gas into the reaction chamber. The residence time of the material gas is increased by decreasing the flow rate of the reaction gas, and in such a manner forms a silicon polymer film having a microporous structure with a low relative dielectric constant. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7183195-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6855629-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101663039-B1 |
| priorityDate |
1998-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |