http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100356939-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1999-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100356939-B1 |
| titleOfInvention | Chemical mechanical abrasive composition for use in semiconductor processing |
| abstract | The present invention provides a chemical mechanical polishing composition for semiconductor processing, characterized in that it comprises a water soluble anionic chemical. According to the present invention, the water soluble anion chemical will be coated on the surface of the metal film during polishing of the metal film to prevent the formation of settlement on the resulting metal circuit.n n n In another aspect, the present invention provides a composition comprising 70-99.5% by weight of a water soluble medium; 0.1-25% by weight of abrasive; 0.01-2.0% by weight of an abrasive improver; A chemical mechanical polishing composition in the form of a slurry comprising 0.01-1% by weight of a water soluble anionic chemical is provided. The chemical mechanical polishing composition of the present invention may further include an oxidizing agent to improve the polishing rate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100450985-B1 |
| priorityDate | 1999-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 86.