http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100346449-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate | 1999-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100346449-B1 |
| titleOfInvention | Manufacturing method for semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device. In an SAC process using an etch barrier layer, a SiC film having a relatively low stress and dielectric constant compared to a nitride film is used as an etch barrier layer. No defects such as warping of the wafer are generated and the dielectric constant is small, so the parasitic capacitance at the operation of the device is small. Therefore, it does not interfere with the fast operation of the device, and the etching selectivity with the oxide film is large. The reliability of device operation can be improved. |
| priorityDate | 1999-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.