| abstract |
(57) Abstract: Provided is a method of manufacturing a semiconductor device in which even a gate electrode and a sidewall are not etched, and miniaturization of a semiconductor device can be easily realized. A method for manufacturing a semiconductor device according to the present invention includes: A gate electrode 3 made of poly-Si is formed on a semiconductor substrate 1 made of Si, and an SiO 2 film or S a step of depositing an iN film, a step of forming a sidewall 5 made of SiO 2 or Si 3 N 4 by etching, and a step of forming an impurity diffusion region 6 in the semiconductor substrate 1, and a step of plasma processing or CVD processing. A step of depositing an SiC film 11 on the semiconductor substrate 1, a step of depositing an interlayer insulating film 7 made of SiO 2 on the SiC film 11, and a step of forming a contact hole 8 in the interlayer insulating film 7 by etching. And a step of removing the SiC film 11 exposed in the contact hole 8 by plasma processing. |