| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
1997-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9924d8717db160d245a3682be116c0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29e05e9dc28ebb0500ef4a85ff827ce4 |
| publicationDate |
2000-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100273861-B1 |
| titleOfInvention |
Semiconductor device and method of producing the same |
| abstract |
The semiconductor device of the present invention using trench isolation includes contact holes. Spacers are formed on the shoulders of the device regions exposed in the contact holes. To form the spacer, after the silicon oxide film is formed, the silicon oxide film is etched by anisotropic etching so as not to fill the contact hole. Anisotropic etching may be performed after oxidation. In this structure, an increase in the junction leakage current can be prevented. |
| priorityDate |
1996-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |