| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
1997-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2001-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100273653-B1 |
| titleOfInvention |
Manufacturing Method of Semiconductor Device |
| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method for manufacturing a semiconductor device suitable for a semiconductor device having a multi-layered wiring. It is a problem to provide a manufacturing method.n n n Forming a wiring layer on a semiconductor substrate; dry etching the wiring layer as a resist pattern mask to form only patterning wiring; and depositing the wiring only by patterning the wiring in an amine-containing liquid and depositing residue during dry etching. A step of removing the amine, a step of treating the wiring immersed in the liquid containing the amine in a fluid capable of removing the deposited residue without containing the amine again, and an insulating layer conformal on the processed wiring. And a step of forming an insulating layer having a planarization function by CVD on the conformal insulating layer. |
| priorityDate |
1996-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |