http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100269931-B1

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filingDate 1997-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2000-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_915112f7fd4cad8c9cf10641170333f5
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publicationDate 2000-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100269931-B1
titleOfInvention Plasma Etching Method and Plasma Etching Apparatus
abstract The plasma etching method includes forming an etching mask on a workpiece; Forming a patterned film on the workpiece having an etching mask thereon, the patterned film comprising a material having an etching rate of at least 80% and at most 120% based on the etching rate for the workpiece; And simultaneously etching the workpiece and the patterned film formed thereon using a reactive gas plasma, wherein forming the patterned film comprises etching the film to a thickness such that the remainder of the film becomes greater than or equal to zero after the workpiece is etched to a predetermined thickness. Forming a step.
priorityDate 1996-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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