Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32706 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-26 |
filingDate |
1997-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2000-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_915112f7fd4cad8c9cf10641170333f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a2974683363e0dfb2c2e2bd62116dba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_279f5bcfd8aa8d031350be447e29bd86 |
publicationDate |
2000-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100269931-B1 |
titleOfInvention |
Plasma Etching Method and Plasma Etching Apparatus |
abstract |
The plasma etching method includes forming an etching mask on a workpiece; Forming a patterned film on the workpiece having an etching mask thereon, the patterned film comprising a material having an etching rate of at least 80% and at most 120% based on the etching rate for the workpiece; And simultaneously etching the workpiece and the patterned film formed thereon using a reactive gas plasma, wherein forming the patterned film comprises etching the film to a thickness such that the remainder of the film becomes greater than or equal to zero after the workpiece is etched to a predetermined thickness. Forming a step. |
priorityDate |
1996-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |