Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9350e7132a8fb77e0f2ebb5b48d780ab |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
filingDate |
1995-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2000-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1f0e1b8ae7c22e6193fa8fe2f7c98cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e477dffd11bf9feff4fcf77b57599213 |
publicationDate |
2000-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100255430-B1 |
titleOfInvention |
Method and apparatus for growing thin film |
abstract |
The present invention relates to a method of growing a thin film on a substrate in which a selectively repeated surface reaction of at least two vapor phase reactants takes place on a substrate located in the reaction space 21 for the purpose of growing the thin film. According to the method, each reactant separated from the reactant source is repeatedly and selectively fed into the reaction space 21 in a medium phase form and reacted with the surface of the substrate for the purpose of growing a solid thin film mixture on the substrate. Contact the phase reactant. According to the invention, the gas volume of the reaction space is introduced by a vacuum pump between two consecutive medium-phase reagent pulses. By transporting different starting materials at different times through this apparatus, it is possible to separate starting materials from each other and thus prevent premature interactions. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102171476-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190004635-A |
priorityDate |
1994-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |