http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100204417-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1995-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_907647bb6608bdb8b9367aeaf94e91e7 |
| publicationDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100204417-B1 |
| titleOfInvention | Semiconductor Device Separation Method |
| abstract | The present invention relates to a semiconductor device isolation method, comprising: forming a device isolation region by forming a trench having a predetermined depth on a silicon substrate requiring region separation; Forming a first thickness oxide film on a whole surface of the silicon substrate including the device isolation region; The first theos oxide film is etched by anisotropic photolithography to form predetermined oxide film spacers on both side walls of the device isolation region, and the device is separated from the channel stop ions using a photoresist pattern coated on a silicon substrate as an ion blocking layer. Implanting into a bottom surface of the region to form a first channel stop region; Removing the photoresist pattern used as the ion blocking layer, and then forming a second theos oxide film on the entire surface of the silicon substrate from which the photoresist is removed; The second and first theos oxides are polished in the same plane as the silicon substrate to form a field oxide film, and then a predetermined photoresist pattern is formed that does not include a predetermined portion of the field oxide film and the silicon substrate. Forming a second channel stop region by implanting channel stop ions into both sides of the device isolation region on the silicon substrate using the pattern as an ion blocking layer; And removing the photoresist pattern. The semiconductor device isolation method according to the present invention forms a trench type field oxide film that does not use a nitride film, and separates the devices. Thus, contamination of particles due to the absence of a nitride film can be reduced, and an active region can be reduced. Since it can ensure enough, the integration degree and electrical characteristics of a semiconductor element can be improved. |
| priorityDate | 1995-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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