http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100200911-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28512 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1991-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf3cd28385cfe8410ff5564320c21293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88abf9869853471a9b134122cd71559b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8a209fb169b8f4750a210f232f92d57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25cb69769ba52132203f318682c067d1 |
| publicationDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100200911-B1 |
| titleOfInvention | Method for making conductive layer and structure for ultra high density integrated circuit and apparatus for implementing the method |
| abstract | In a method of making a conductive layer or structure for an ultra-high density integrated circuit, at least two process steps are carried out directly in the various chambers 1 to 6 of the high vacuum equipment without interrupting the high vacuum conditions for the semiconductor substrate. Avoiding exposure to air between process steps substantially delivers better layer properties and enables a simple and reliable multi-step method for producing a conductive layer that preferably supports multi-layered metal wiring on a semiconductor substrate. The apparatus used consists of a plurality of high vacuum process chambers 1 to 6, at least one high vacuum distribution chamber 7 connecting the process chambers, and at least two high vacuum supply chambers for the semiconductor substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100367455-B1 |
| priorityDate | 1990-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.