http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0171989-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1995-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ed062132f5de51de610b6babb4dd2cf |
| publicationDate | 1999-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0171989-B1 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a gate electrode pattern etching method for preventing destruction of a gate insulating layer during dry etching for forming a gate electrode pattern. Such a method of manufacturing a semiconductor device of the present invention comprises the steps of sequentially forming a gate oxide film and polysilicon on a silicon substrate; Forming a photoresist pattern on a region where the gate electrode is to be formed on the polysilicon; Positioning the resulting semiconductor substrate in a plasma chamber and applying high frequency power to make the chamber into a plasma state; Dry etching the native oxide on the polysilicon in the form of the photoresist pattern to expose the polysilicon; Plasma dry etching polysilicon while applying initial high frequency power for polysilicon etching and gradually decreasing the high frequency power; Pumping the plasma chamber; Applying an initial high frequency power for over etching and etching to a predetermined% thickness of the gate oxide film; And dividing the initial high frequency power into predetermined equal parts and dry etching the gate oxide film while gradually decreasing the power of the equal value. |
| priorityDate | 1995-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.