http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0139772-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-90 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 |
| filingDate | 1993-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd88181397779379d2d0882c661a64dc |
| publicationDate | 1998-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0139772-B1 |
| titleOfInvention | Semiconductor integrated circuit device and manufacturing method thereof |
| abstract | An object of the present invention is to provide a gate electrode with stable characteristics and to form a gate self-aligned contact (SAC) without reducing the insulating film covering the gate electrode at the time of opening of the contact.n n n Since the polysilicon film 5 is formed in the part formed on the gate electrode 3 of the wiring 10 which consists of the polysilicon formed on the semiconductor substrate 1, the wiring 10 is thickened in this part. Therefore, doping of the impurity injected into the wiring into the gate electrode is prevented. When the gate SAC is formed on the semiconductor substrate 1 having the polysilicon gate, the polysilicon film 5 is formed on the insulating film 4 formed on the gate electrode 3 to overetch the insulating film 4. prevent. |
| priorityDate | 1992-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 23.