http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2021106262-A1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-54
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
filingDate 2020-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2021106262-A1
titleOfInvention Film formation method
abstract When forming a dielectric film by target sputtering, the number of particles adhering to the surface of the substrate to be processed immediately after film formation is as large as possible without impairing the function of effectively suppressing the induction of abnormal discharge. Provided is a film forming method capable of reducing the number. In the film forming method of the present invention in which the target 2 is sputtered in the vacuum chamber 1 to form a dielectric film on the surface of the substrate Sw to be processed, a negative potential is applied in a pulse shape to the target during sputtering of the target. Then, the frequency when the negative potential is applied in a pulse shape is set in the range of 100 kHz or more and 150 kHz or less, and the application time Ton of the negative potential is set in the range longer than 5 μsec and shorter than 8 μsec.
priorityDate 2019-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013049885-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015056529-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009275281-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0841636-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005264225-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002533574-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10237640-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0790573-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015

Total number of triples: 29.