| abstract |
The plasma CVD apparatus (10) is a vacuum chamber (21) for partitioning a space for accommodating a film forming target (S), and a storage unit (30) for storing hydrogen-free isocyanate silane, and is a storage unit (30). ), The storage unit (30) for generating isocyanate silane gas for heating the isocyanate silane to be supplied to the vacuum chamber (21) and the storage unit (30) are connected to the vacuum tank (21), and the storage unit (21) is connected. A pipe (11) for supplying the isocyanate silane gas generated by 30) to the vacuum tank (21), a temperature control unit (12) for adjusting the temperature of the pipe (11) to 83 ° C. or higher and 180 ° C. or lower, and a vacuum tank. An electrode (22) arranged in (21) and a power supply (23) for supplying high-frequency power to the electrode (22) are provided. In the vacuum chamber (21), the pressure in the vacuum chamber (21) when the silicon oxide film is formed with respect to the film forming target (S) is 50 Pa or more and less than 500 Pa. |