| abstract |
The semiconductor device (1) has a semiconductor layer (40) having main surfaces (40a and 40b) and main surfaces (31a and 31b), and the main surface (31a) contacts the main surface (40b). The semiconductor layer (31) has a metal layer (31) thicker than the layer (40) and made of a first metal material, and main surfaces (30a and 30b), the main surface (30a) being in contact with the main surface (31b). 40), which has a metal layer (30) made of a metal material having a Young's modulus larger than that of the first metal material and a transistor (10 and 20), and the transistor (10) is a semiconductor layer (40). The transistor (20) has a source electrode (11) and a gate electrode (19) on the main surface (40a) side, and the transistor (20) has a source electrode (21) and a gate electrode (29) on the main surface (40a) side of the semiconductor layer (40). ), and the bidirectional path from the source electrode (11) to the source electrode (21) via the metal layer (31) is the main current path. |