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filingDate 2018-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2019035223-A1
titleOfInvention Plasma generation apparatus, substrate processing apparatus, and semiconductor device manufacturing method
abstract A high-frequency power supply for supplying power to the plasma generation unit, provided between the high-frequency power supply and the plasma generation unit, for matching the load impedance of the plasma generation unit and the output impedance of the high-frequency power supply A matching device, the high-frequency power source is arranged in a high-frequency oscillator that oscillates a high frequency, and the high-frequency oscillator, and the traveling wave component from the high-frequency oscillator and a part of the reflected wave component from the matching device, respectively. A directional coupler to be taken out, a filter for removing a noise signal added to the reflected wave component taken out by the directional coupler, the reflected wave component after passing through the filter, and taken out by the directional coupler. The traveling wave component is measured, and the matching device is feedback-controlled so that the reflected wave component from the matching device is reduced. That provides a technique and a power monitor.
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