| abstract |
Supplying a first raw material containing at least two Si-N bonds and at least one Si-C bond in one molecule to the substrate, and supplying a second raw material containing nitrogen and hydrogen to the substrate. A step of forming a first layer containing silicon, carbon and nitrogen by performing a set including a step for a predetermined number of times, and supplying an oxidizing agent to the substrate to oxidize the first layer to form a second layer. A film containing silicon, oxygen, carbon, and nitrogen is formed over the substrate by performing a cycle including a step of forming a layer a predetermined number of times. |