| abstract |
Provided is a semiconductor device having excellent electric characteristics. A first insulator is formed over the oxide; a second insulator is formed over the first insulator; a conductor is formed over the second insulator; Forming a third insulator in contact with a side surface of the insulator, a side surface of the second insulator, and a side surface of the conductor; the first insulator and the second insulator are formed under a reduced pressure atmosphere; Form continuously. |