http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018181240-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2203-326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E40-60 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J201-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-29 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J201-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B27-00 |
| filingDate | 2018-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2018181240-A1 |
| titleOfInvention | Adhesive tape for protecting semiconductor wafer surface and method for processing semiconductor wafer |
| abstract | An adhesive tape for protecting a semiconductor wafer surface, which is used by heating and bonding at a temperature of 40 ° C. to 90 ° C. on a surface of a semiconductor wafer having an unevenness of 20 μm or more, wherein the adhesive tape for protecting a semiconductor wafer surface comprises a substrate A film, a pressure-sensitive adhesive layer, and an intermediate resin layer between the base film and the pressure-sensitive adhesive layer, wherein the thickness of the intermediate resin layer is equal to or greater than the irregularity difference, and constitutes the intermediate resin layer. Pressure-sensitive adhesive tape for protecting the surface of a semiconductor wafer, wherein the melting point or the Vicat softening point of the resin to be formed is 40 ° C. to 90 ° C., and the melt mass flow rate of the resin constituting the intermediate resin layer is 10 g / min to 100 g / min. Of processing a semiconductor wafer using the method. |
| priorityDate | 2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 121.