Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67132 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 |
filingDate |
2018-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2019-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-WO2018155569-A1 |
titleOfInvention |
Mask-integrated surface protective tape and method of manufacturing semiconductor chip using the same |
abstract |
【Task】 Mask fabrication with a photolithographic process is not necessary in the production of semiconductor chips using the plasma dicing method. Excellent performance in each process of semiconductor chip production, mask-integrated surface protection with excellent operability and workability A method for manufacturing a tape and a semiconductor chip is provided. [Solution] A mask-integrated surface protection tape having at least a base film and a mask material layer, The mask material layer is provided in contact with the base film, or is provided via an adhesive layer, A mask-integrated surface protective tape and a method for producing a semiconductor chip, wherein the mask material layer has a parallel light transmittance of 30% or less in a wavelength region of 355 nm. [Selection] Figure 4 |
priorityDate |
2017-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |