http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018151140-A1

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filingDate 2018-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2018151140-A1
titleOfInvention Silicon deposition core wire, method for producing the core wire, and method for producing polycrystalline silicon
abstract Improve the production efficiency of polycrystalline silicon. The silicon core wire (11) is composed of a rod-shaped body of polycrystalline silicon, and the polycrystalline silicon has an interstitial oxygen concentration of 10 ppma or more and 40 ppma or less, and a crystal grain size of 1 mm or more on the side surface in the longitudinal direction of the rod-shaped body. Crystal grains are observed.
priorityDate 2017-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.