| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-03 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate |
2008-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f61199af5dded8543b3c99f362dc850
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_958ed5661dd4882d8e871efe6d1c7631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15f8395d38610a7a22b4c90f448267fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4c607b5874cbc2b4dee5354491bac0e |
| publicationDate |
2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009263149-A |
| titleOfInvention |
Method for producing polycrystalline silicon rod |
| abstract |
The present invention provides a method for manufacturing a polycrystalline silicon rod for FZ which is a low impurity contamination (high purity) polycrystalline silicon rod and has a high single crystallization efficiency. A flat silicon 11 is cut out from a body portion 10b obtained by cutting off a shoulder portion 10s and a tail portion 10t of a single crystal silicon ingot 10, and further cut into a strip shape to obtain a silicon rod (core wire) 12. . The surface of the core wire cut out in this way is preferably subjected to an etching process for the purpose of removing residual strain generated during the cutting process. When the crystal growth axis orientation is <100>, there are four crystal wall lines (h1 to h4), but the surface of the silicon rod (core wire) 12 forms an off-angle θ of a specific range with the crystal wall line. It is cut out as follows. The off-angle θ at this time is preferably in the range of 5 degrees to 40 degrees. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103205800-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101408552-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7128124-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103205800-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11254579-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015024958-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014125358-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018151140-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11345603-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020117408-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018151140-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012134489-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110291040-A |
| priorityDate |
2008-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |